• DocumentCode
    1454223
  • Title

    The effect of dislocations on the capacitance vs. bias voltage characteristic of mos capppacitors

  • Author

    Goklaney, S.M. ; Porter, W.A.

  • Volume
    12
  • Issue
    5
  • fYear
    1974
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    MOS capacitors have been fabricated on silicon material that has been selectively damaged. Varying dislocation densities have been produced and the resulting effects on carrier mobility has been related to the C-V characteristics of the MOS capacitors. Critical dislocation densities that change the C-V characteristics from high frequency to low frequency at 1 KHz are presented and discussed.
  • Keywords
    capacitors; metal-insulator-semiconductor devices; MOS capacitors; capacitance versus bias voltage characteristics; effect of dislocations;
  • fLanguage
    English
  • Journal_Title
    India, IEE-IERE Proceedings -
  • Publisher
    iet
  • ISSN
    0018-9146
  • Type

    jour

  • DOI
    10.1049/iipi.1974.0052
  • Filename
    5257894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1454223