Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Author

Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Hou, H.Q. ; Monier, C. ; Laroche, J.R. ; Ren, F. ; Pearton, S.J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

22

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

113

Lastpage

115

Abstract

We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal current-voltage (I-V) characteristics with a current gain greater than 45. The smaller bandgap energy of the InGaAsN base has led to a device turn-on voltage that is 0.27 V lower than in a comparable p-n-p AlGaAs/GaAs heterojunction bipolar transistor. This device has shown f/sub T/ and f/sub MAX/ values of 12 GHz. In addition, the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; DC characteristics; GaAs-InGaAsN-GaAs; GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor; RF characteristics; aluminum-free emitter; bandgap energy; current gain; current-voltage characteristics; cutoff frequency; low-power complementary HBT; maximum operating frequency; turn-on voltage; Capacitive sensors; DH-HEMTs; Double heterojunction bipolar transistors; Foundries; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Lattices; Photonic band gap; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.910612

Filename

910612