• DocumentCode
    1454521
  • Title

    Laser Validation of a Non-Destructive Test Methodology for the Radiation Sensitivity Assessment of Power Devices

  • Author

    Miller, F. ; Morand, S. ; Douin, A. ; Gaillard, R. ; Carriére, T. ; Buard, N.

  • Author_Institution
    EADS France Innovation Works, Suresnes, France
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • fDate
    6/1/2011 12:00:00 AM
  • Firstpage
    813
  • Lastpage
    819
  • Abstract
    This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of destructive single event effects in power devices. Laser tests and simulations are used to demonstrate its efficiency.
  • Keywords
    MOSFET; insulated gate bipolar transistors; laser beam applications; nondestructive testing; power semiconductor devices; IGBT; MOSFET; destructive single event effects; laser validation; nondestructive test methodology; power device; radiation sensitivity assessment; Insulated gate bipolar transistors; Measurement by laser beam; Power MOSFET; Power lasers; Sensitivity; Burnout; IGBT; MOSFET; SEB; SEL; SET; destructive single event effects; laser; latchup; non-destructive tests; radiation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2098887
  • Filename
    5716709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1454521