DocumentCode
1454546
Title
RF power LDMOSFET on SOI
Author
Fiorenza, J.G. ; Antoniadis, D.A. ; del Alamo, J.A.
Author_Institution
MIT, Cambridge, MA, USA
Volume
22
Issue
3
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
139
Lastpage
141
Abstract
We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high fT are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 μm the device fT is 14 GHz, fmax is 18 GHz, and the breakdown voltage approaches 25 V.
Keywords
power MOSFET; silicon-on-insulator; 0.7 micron; 14 GHz; 18 GHz; 25 V; RF power amplifier; breakdown voltage; cutoff frequency; fabrication; laterally diffused MOSFET; maximum operating frequency; thin film SOI wafer; under-source body contact; wireless system-on-a-chip; CMOS process; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; System-on-a-chip; Thin film circuits; Thin film devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.910622
Filename
910622
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