Title :
RF power LDMOSFET on SOI
Author :
Fiorenza, J.G. ; Antoniadis, D.A. ; del Alamo, J.A.
Author_Institution :
MIT, Cambridge, MA, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high fT are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 μm the device fT is 14 GHz, fmax is 18 GHz, and the breakdown voltage approaches 25 V.
Keywords :
power MOSFET; silicon-on-insulator; 0.7 micron; 14 GHz; 18 GHz; 25 V; RF power amplifier; breakdown voltage; cutoff frequency; fabrication; laterally diffused MOSFET; maximum operating frequency; thin film SOI wafer; under-source body contact; wireless system-on-a-chip; CMOS process; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon on insulator technology; System-on-a-chip; Thin film circuits; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
