Title :
0.2 μm gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft=62 GHz
Author :
Shealy, J.B. ; Mishra, U.K.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
11/7/1996 12:00:00 AM
Abstract :
Recently, the authors demonstrated improved breakdown characteristics in 1 μm gate length P+-AlInAs/N-AlInAs/GaInAs JHEMTs utilising a junction to modulate the 2-DEG and regrowth of the ohmic contact regions by MOCVD. The authors present high frequency operation (ft and fmax of 62 and 105 GHz, respectively) of 0.2 μm devices with high current (500 mA/mm) and transconductance (300 mS/mm) giving improved breakdown characteristics (twoand three-terminal gate breakdown voltages of 19 and 16 V, respectively)
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; ohmic contacts; semiconductor growth; two-dimensional electron gas; vapour phase epitaxial growth; 0.2 micron; 105 GHz; 16 V; 19 V; 2-DEG; 300 mS/mm; 62 GHz; AlInAs-AlInAs-GaInAs; III-V semiconductors; JHEMTs; MOCVD; breakdown characteristics; gate length; high frequency operation; junction-modulated HEMT; ohmic contact regions; three-terminal gate breakdown voltages; transconductance; two-terminal gate breakdown voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961428
