Epitaxial liftoff microcavities for 1.55-μm quantum-well spatial light modulators

Author

De Matos, C. ; L´Haridon, H. ; Le Corre, A. ; Lever, R. ; Keromnes, J.C. ; Ropars, G. ; Vaudry, C. ; Lambert, B. ; Pugnet, M.

Author_Institution

France Telecom, CNET, Lannion, France

Volume

11

Issue

1

fYear

1999

Firstpage

57

Lastpage

59

Abstract

Microcavities operating at 1.55 μm have been realized according to the epitaxial liftoff (ELO) technique. The process is described and characterized. No significant variation of the optical properties of the grafted devices has been found. The technique is then applied to a spatial light modulator made by inserting a 3-μm multiple-quantum-well device in a short asymmetric Fabry-Perot microcavity. An enhancement by a factor 1000 of the performances of the switching component is obtained. The input diffraction efficiency reaches 2% in a degenerated four wave mixing configuration with a pulse energy of 1 μJ/cm² and without any applied electric field.

Keywords

Fabry-Perot resonators; epitaxial growth; micro-optics; multiwave mixing; optical communication equipment; optical fabrication; optical resonators; semiconductor growth; semiconductor quantum wells; 1.55 mum; 2 percent; 3 mum; degenerated four wave mixing configuration; epitaxial liftoff microcavities; grafted devices; input diffraction efficiency; multiple-quantum-well device; optical properties; pulse energy; quantum-well spatial light modulators; short asymmetric Fabry-Perot microcavity; switching component; Bonding; Gallium arsenide; High speed optical techniques; Microcavities; Mirrors; Optical mixing; Optical modulation; Quantum well devices; Quantum wells; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.736389

Filename

736389