Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

Author

Kim, Edwin ; Jain, Nikhil ; Xu, Yang ; Yu, Bin

Author_Institution

Coll. of Nanoscale Sci. & Eng., State Univ. of New York, Albany, NY, USA

Volume

11

Issue

3

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

619

Lastpage

623

Abstract

We demonstrate one of the basic building elements of graphene electronics, logic inverter, based on graphene-on-boron nitride material system. The inverter is composed of two adjacent graphene-channel field-effect transistors (GFETs). The impacts of hexagonal boron nitride, a new supporting substrate material, on major device performance metrics of GFET such as small-signal transconductance g m and effective carrier mobility μ_eff are explored. The prototype of logic inverter is demonstrated on a single sheet of CVD-assembled monolayer graphene based on the unique ambipolar conduction behavior of the 2-D nanoscale carbon system.

Keywords

chemical vapour deposition; field effect transistors; graphene; logic gates; CVD-assembled graphene FET; GFET; ambipolar conduction; graphene electronics; graphene-channel field-effect transistors; graphene-on-boron nitride material system; hexagonal boron nitride; logic inverter; Doping; Inverters; Logic gates; Resistance; Silicon; Substrates; Carrier mobility; carbon circuit; field-effect transistor; graphene; hexagonal boron nitride;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2012.2188413

Filename

6156450