Title :
Optimising a GaAs HBT amplifier for maximum gain efficiency
Author :
Kobayashi, K.W. ; Tran, L.T. ; Oki, A.K. ; Lammert, M.D. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
11/7/1996 12:00:00 AM
Abstract :
The authors report a GaAs HBT amplifier which achieves a gain efficiency of 2.14 dB/mW at 17 GHz which is believed to be among the highest reported for a self-biased MMIC in this frequency range. The amplifier´s optimum gain bias was determined by finding the maxima of a simple bipolar gain-bias function which involves the graphical solution of a transcendental equation. This design calculation was experimentally verified for a four-stage Ku-band HBT amplifier which achieves 11.94 dB gain at 17 GHz while consuming only 5.64 mW of DC power through a 1.88 V supply. This method for optimising the gain efficiency can be applied to the design of ultra-low DC power HBT gain blocks for communication and radio-astronomy applications
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; circuit optimisation; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; 1.88 V; 11.94 dB; 17 GHz; 5.64 mW; GaAs; HBT amplifier; bipolar gain-bias function; four-stage Ku-band amplifier; gain efficiency; optimum gain bias; self-biased MMIC; transcendental equation; ultra-low DC power HBT gain blocks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961413
