Fused InP-GaAs vertical coupler filters

Author

Bin Liu ; Shakouri, A. ; Abraham, P. ; Chiu, Y.J. ; Zhang, S. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

11

Issue

1

fYear

1999

Firstpage

93

Lastpage

95

Abstract

A novel vertical coupler filter based on fused InGaAsP-InP and AlGaAs-GaAs waveguide structures is proposed and demonstrated. The large material dispersion difference between InGaAsP and AlGaAs around 1.55 μm and similar waveguide geometries are used to realize a less sensitive polarization and narrow-band filter with two separated inputs and outputs and more than -40-dB sidelobe suppression should be possible.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; light polarisation; optical communication equipment; optical couplers; optical dispersion; optical waveguide filters; wavelength division multiplexing; 1.55 mum; AlGaAs-GaAs; AlGaAs-GaAs waveguide structures; InGaAsP-InP; InGaAsP-InP waveguide structures; InP-GaAs; dB sidelobe suppression; fused InP-GaAs vertical coupler filters; large material dispersion difference; less sensitive polarization; narrow-band filter; separated inputs; separated outputs; waveguide geometries; Bandwidth; Directional couplers; Geometrical optics; Narrowband; Optical fiber polarization; Optical filters; Optical interferometry; Optical materials; Optical sensors; Optical waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.736405

Filename

736405