Title :
A monolithically integrated 1-Gb/s silicon photoreceiver
Author :
Schow, C.L. ; Schaub, J.D. ; Li, R. ; Qi, J. ; Campbell, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
We report a monolithically integrated optical receiver consisting of a silicon NMOS transimpedance preamplifier paired with a lateral, interdigitated p-i-n photodiode. The preamplifier achieved a bandwidth of 500 MHz, a transimpedance of 51.4 dB-/spl Omega/ and dissipated only 10.8 mW of power at a power supply voltage of 1.8 V. At a bit-error rate of 10/sup -9/, the receiver exhibited sensitivities of -22.8, -15, and -9.3 dBm at bit rates of 622 Mb/s, 900 Mb/s, and 1 Gb/s, respectively. To the best of the authors´ knowledge this is the highest sensitivity at 1 Gb/s reported for a silicon monolithically integrated optical receiver.
Keywords :
MOS integrated circuits; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; preamplifiers; sensitivity; silicon; 1 Gbit/s; 1.8 V; 10.8 mW; 500 GHz; 622 Mbit/s; Si; bit-error rate; highest sensitivity; lateral interdigitated p-i-n photodiode; monolithically integrated Gb/s silicon photoreceiver; monolithically integrated optical receiver; power supply voltage; sensitivities; silicon NMOS transimpedance preamplifier; silicon monolithically integrated optical receiver; Bandwidth; Bit error rate; Bit rate; MOS devices; Optical receivers; PIN photodiodes; Power supplies; Preamplifiers; Silicon; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
