Title :
Quantum Dots-Based All-Optical-Readout Middle-Far-Infrared Imaging
Author :
Chen, Gang ; Martini, Rainer
Author_Institution :
Key Lab. for Optoelectron. Technol. & Syst., Chongqing Univ., Chongqing, China
fDate :
3/1/2011 12:00:00 AM
Abstract :
A quantum dot (QD) middle-far-infrared (MFIR) detection and imaging approach based on all-optical-readout (AORO) is proposed. Using the intersubband (ISB) optical transition to change the interband (IB) absorption, it converts the ISB MFIR signal into the IB near-infrared signal. It might overcome the problems in the electrical readout infrared detection and imaging, such as dark current, low-temperature operation, low resolution, and vulnerability to the high radiation intensity. Based on the In0.5Ga0.5As/GaAs lens-shaped QD structure, our calculation shows the potential of this AORO approach for the MFIR detection and high-resolution imaging, the potential for room-temperature operation, and the ability for frequency selectivity and spectrum scanning.
Keywords :
III-V semiconductors; gallium arsenide; image resolution; indium compounds; infrared detectors; infrared imaging; light absorption; semiconductor quantum dots; In0.5Ga0.5As-GaAs; all-optical-readout middle-far-infrared imaging; dark current; electrical readout infrared detection; frequency selectivity; image resolution; interband absorption; intersubband optical transition; lens-shaped structure; low-temperature operation; near-infrared signal; quantum dots; radiation intensity; room-temperature operation; spectrum scanning; Absorption; Energy states; Gallium arsenide; Optical imaging; Optical modulation; Optics; Infrared detectors; infrared imaging; optical modulation; quantum dots;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2080260