Title :
Analysis of latchup-induced photon emissions
Author :
Aoki, Takahiro ; Yoshii, Akira
Author_Institution :
NTT LSI Lab., Atsugi, Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
Latchup-induced photon emission from CMOS devices is studied and compared with photon emission from hot carriers. Experiments revealed fundamental differences in spectral characteristics. By exploiting these differences, latchup sites are identified and depicted in high resolution. An effective method of separating photon emission patterns by passing through bandpass optical filters is described. It is shown that the photon emission mechanism from latchup is phonon-assisted electron-hole recombination
Keywords :
CMOS integrated circuits; electroluminescence; electron-hole recombination; electron-phonon interactions; CMOS devices; bandpass optical filters; hot carriers; latchup sites; latchup-induced photon emissions; phonon-assisted electron-hole recombination; spectral characteristics; Image intensifiers; Infrared detectors; Monitoring; Optical filters; Optical microscopy; Optical sensors; Photonic integrated circuits; Spatial resolution; Stimulated emission; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
