Title :
Two-dimensional avalanche simulation of collector-emitter breakdown
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
9/1/1990 12:00:00 AM
Abstract :
A two-dimensional (2-D) transient simulation approach with the avalanche effect included has been used to study breakdown phenomena in conventional vertical bipolar transistors of the n-p-n type. The simulated current responses to voltage ramps show the important difference in speed for the emitter-collector breakdown and collector-base breakdown. DC specified values may be too conservative
Keywords :
bipolar transistors; impact ionisation; semiconductor device models; 2D avalanche simulation; collector-emitter breakdown; current responses; n-p-n vertical bipolar transistors; voltage ramps; Avalanche breakdown; Bipolar transistors; Breakdown voltage; Charge carrier processes; Doping; Electric breakdown; Epitaxial layers; Steady-state; Two dimensional displays; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
