Title :
Ultrahigh-frequency self-pulsations under gain-switching modulation in 1.5-μm dynamical single-mode monolithic compound-cavity semiconductor lasers: Experiment and theory
Author :
Wang, Jian ; Schweizer, Heinz
Author_Institution :
Phys. Inst., Stuttgart Univ., Germany
fDate :
9/1/1996 12:00:00 AM
Abstract :
The generation of 50-130-GHz high-frequency self-pulsations in ultrafast gain-switched InGaAs-InGaAsP dynamical single-mode monolithic compound-cavity lasers is studied in this paper. With various cavity lengths, the dependence of the pulsation frequency on the length of the respective cavity is shown and analyzed in detail. To explain the observed phenomena, a dynamic theory of the semiconductor laser amplifier is described which takes into account the coherent time-dependent amplification, shortening, and reflection of an incident picosecond optical pulse in the gain-switched amplifier. With the presented model, the theoretical simulation results agree well with the experimental observations
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; laser cavity resonators; optical modulation; optical switches; quantum well lasers; time resolved spectra; 1.5 mum; 50 to 130 GHz; InGaAs-InGaAsP; cavity length dependence; coherent time-dependent amplification; dynamic theory; dynamical single-mode monolithic compound-cavity semiconductor lasers; gain-switching modulation; picosecond optical pulse reflection; picosecond optical pulse shortening; pulsation frequency; semiconductor laser amplifier; simulation results; time resolved laser responses; ultrafast gain-switched InGaAs-InGaAsP lasers; ultrahigh-frequency self-pulsation generation; Frequency; Laser feedback; Laser mode locking; Laser modes; Laser theory; Optical pulse generation; Optical pulses; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.571756
