High-current snapback characteristics of MOSFETs

Author

Fong, Y. ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2101

Lastpage

2103

Abstract

The high-current snapback characteristics of MOSFETs with different channel lengths and widths, gate oxide thicknesses, and substrate dopings were studied to determine their effectiveness in electrostatic discharge stress protection. Filamentary conduction was not observed for currents up to 7 mA/μm of channel width for a pulsewidth of 500 ns. MOSFETs with shorter channel lengths require lower voltages to sustain the same current, independent of gate oxide thickness. Increasing the substrate doping does not necessarily reduce the high current voltage. These trends can be explained using a simple lateral n-p-n bipolar transistor snapback model

Keywords

electrostatic discharge; insulated gate field effect transistors; semiconductor device models; MOSFETs; channel lengths; channel width; electrostatic discharge stress protection; gate oxide thicknesses; high-current snapback characteristics; lateral n-p-n bipolar transistor snapback model; substrate dopings; Biological system modeling; Breakdown voltage; Doping; Electrostatic discharge; MOS capacitors; MOSFETs; Protection; Pulse measurements; Resistors; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57176

Filename

57176