Title :
Comparative SEU sensitivities to relativistic heavy ions
Author :
Koga, R. ; Crain, S.H. ; Crain, W.R. ; Crawford, K.B. ; Hansel, S.J.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
SEU sensitivity of microcircuits to relativistic heavy ions is compared to that measured with low energy ions of comparable LET values. Multiple junction charge collection in a complex circuit seems to mask the effect of varying charge generations due to different ion track structures. Heavy ions at sub-relativistic speeds may generate nuclear fragments, sometimes resulting in SEUs
Keywords :
integrated circuit testing; ion beam effects; LET spectra; SEU sensitivity; charge generation; ion track; microcircuit; multiple junction charge collection; nuclear fragment; relativistic heavy ion irradiation; Circuits; Electrostatic precipitators; Energy measurement; Extraterrestrial measurements; MOS devices; Nuclear power generation; Random access memory; Single event upset; Storms; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on