Title :
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
Author :
Roche, Ph. ; Palau, J.-M. ; Belhaddad, K. ; Bruguier, G. ; Ecoffet, R. ; Gasiot, J.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
12/1/1998 12:00:00 AM
Abstract :
The first SEU response of a complete 3-D SRAM cell is presented. This simulation method allows one to verify the accuracy of the commonly used mixed-mode technique and to study coupling effects between different junctions of the cell
Keywords :
SRAM chips; circuit simulation; digital simulation; integrated circuit modelling; radiation effects; 3D SRAM cell; SEU response; contiguous 3D device domain; coupling effects; mixed-mode technique; simulation method; single event upset; Computational modeling; Discrete event simulation; Doping profiles; Finite element methods; Random access memory; Silicon; Single event upset; Stress; Sun; Time factors;
Journal_Title :
Nuclear Science, IEEE Transactions on
