Total dose effects on gate controlled lateral PNP bipolar junction transistors

Author

Cazenave, Ph. ; Fouillat, P. ; Montagner, X. ; Barnaby, H. ; Schrimpf, R.D. ; Bonora, L. ; David, J.P. ; Touboul, A. ; Calvet, M.-C. ; Calvel, P.

Author_Institution

Lab. IXL, Bordeaux I Univ., Talence, France

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2577

Lastpage

2583

Abstract

A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics

Keywords

bipolar transistors; radiation hardening (electronics); BiCMOS process; accumulation mode; current characteristics; gate controlled lateral PNP bipolar junction transistor; gate potential; radiation hardness; radiation induced degradation; total dose effect; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Circuit testing; Degradation; Electric variables; Electrodes; Pollution measurement; Surface contamination; Telecommunication control;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736500

Filename

736500