DocumentCode :
1455384
Title :
Transient response of a transistor-tunnel diode hybrid combination
Author :
Srivastava, A. ; Gupta, M.L.
Author_Institution :
Birla Institute of Technology and Science, Department of Electrical and Electronics Engineering, Pilani, India
Volume :
14
Issue :
2
fYear :
1976
Firstpage :
35
Lastpage :
43
Abstract :
An approach is suggested for characterising the switching behaviour of a typical transistor-tunnel diode hybrid combination. The method uses the charge-control model for the transistor and empirical power functions for the tunnel diode. Though an accurate nonlinear power function is used for the tunnel diode, the final switching time expressions are obtained in terms of some average time constants associated with the various segments of the tunnel diode characteristic. Experimental observations with tunnel diode in combination with slow and gold-doped switching transistors demonstrate that the models used in the analysis are satisfactory for engineering calculations. Potentially, the method is quite general and can also be used for the analysis of other possible hybrid combinations.
Keywords :
bipolar transistors; semiconductor device models; semiconductor switches; tunnel diodes; charge control model; empirical power functions; final switching time expressions; gold doped transistor; hybrid combination; slow switching transistor; switching behaviour; transient response; transistor tunnel diode hybrid combination;
fLanguage :
English
Journal_Title :
India, IEE-IERE Proceedings -
Publisher :
iet
ISSN :
0018-9146
Type :
jour
DOI :
10.1049/iipi.1976.0014
Filename :
5258121
Link To Document :
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