DocumentCode
1455422
Title
Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation
Author
Barillot, C. ; Serres, O. ; Marec, R. ; Calve, P.
Author_Institution
ALCATEL Espace, Toulouse, France
Volume
45
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
2638
Lastpage
2643
Abstract
The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices
Keywords
bipolar integrated circuits; integrated circuit reliability; integrated circuit testing; life testing; radiation effects; HTRB test; bipolar ICs; bipolar integrated circuits; burn-in test; high temperature reverse bias test; life test; reliability screening tests; total dose irradiation; total dose response; Bipolar integrated circuits; Ceramics; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Life testing; Packaging; Plastics; Pulse width modulation; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.736508
Filename
736508
Link To Document