Title :
Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation
Author :
Barillot, C. ; Serres, O. ; Marec, R. ; Calve, P.
Author_Institution :
ALCATEL Espace, Toulouse, France
fDate :
12/1/1998 12:00:00 AM
Abstract :
The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices
Keywords :
bipolar integrated circuits; integrated circuit reliability; integrated circuit testing; life testing; radiation effects; HTRB test; bipolar ICs; bipolar integrated circuits; burn-in test; high temperature reverse bias test; life test; reliability screening tests; total dose irradiation; total dose response; Bipolar integrated circuits; Ceramics; Circuit testing; Integrated circuit reliability; Integrated circuit testing; Life testing; Packaging; Plastics; Pulse width modulation; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
