Moderated degradation enhancement of lateral pnp transistors due to measurement bias

Author

Witczak, S.C. ; Schrimpf, R.D. ; Barnaby, H.J. ; Lacoe, R.C. ; Mayer, D.C. ; Galloway, K.F. ; Pease, R.L. ; Fleetwood, D.M.

Author_Institution

Electron. Technol. Center, Aerosp. Corp., Los Angeles, CA, USA

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2644

Lastpage

2648

Abstract

Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications

Keywords

bipolar transistors; electron traps; gamma-ray effects; hole traps; life testing; radiation hardening (electronics); semiconductor device measurement; ADI RF25; PNP transistors; accelerated hardness assurance tests; base series resistance; emitter metallization; field effects; high-level carrier injection; interface trap charging; irradiation temperatures; lateral p-n-p transistors; low power applications; low-dose-rate gain degradation; measurement bias; moderated degradation enhancement; oxide trapped charge; radiation-induced degradation; Bipolar transistors; Circuit testing; Degradation; Electrical resistance measurement; Gain measurement; Life estimation; Metallization; Microelectronics; Spontaneous emission; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736509

Filename

736509