First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment

Author

Titus, J.L. ; Combs, W.E. ; Turflinger, T.L. ; Krieg, J.F. ; Tausch, H.J. ; Brown, D.B. ; Pease, R.L. ; Campbell, A.B.

Author_Institution

Naval Surface Warfare Centre, Crane, IN, USA

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2673

Lastpage

2680

Abstract

Bipolar devices, most notably circuits fabricated with lateral PNP transistors (LPNP) and substrate PNP transistors (SPNP), have been observed to exhibit an enhanced low dose rate sensitivity when exposed to ionizing radiation. These dose rate sensitive bipolar devices exhibited enhanced degradation of base current in transistors and of input bias current, offset current, and/or offset voltage in linear circuits at dose rates less than 0.1 rd(Si)/s compared to devices irradiated at dose rates greater than 1 rd(Si)/s. The total dose responses of several bipolar transistors and linear circuits in a space environment are demonstrated to exhibit enhanced degradation comparable, in magnitude, to ground-based data irradiated at a dose rate of 10 mrd(Si)/s indicating that enhanced low dose rate sensitivities (ELDRS) do indeed exist in space

Keywords

bipolar analogue integrated circuits; bipolar transistors; radiation effects; space vehicle electronics; MPTB experiment; base current; bias current; bipolar device; enhanced low dose rate sensitivity; ionizing radiation; lateral PNP transistor; linear circuit; offset current; offset voltage; space environment; substrate PNP transistor; Analog integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit testing; Degradation; Extraterrestrial measurements; Integrated circuit measurements; Linear circuits; Satellites; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736514

Filename

736514