Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference

Author

Li Lu ; Changzhi Li

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA

Volume

49

Issue

11

fYear

2013

fDate

May 23 2013

Firstpage

694

Lastpage

696

Abstract

Presented is a gain-boosted gate-bulk-driven error correction amplifier with reduced offset errors for low-voltage sub-bandgap reference designs. The method can be applied to sub-bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over - 55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.

Keywords

MOSFET; Schottky barriers; amplifiers; bipolar transistors; energy gap; error correction; error statistics; low-power electronics; semiconductor diodes; BJT diodes; Schottky barrier diodes; circuit implementation; detailed analysis; gain boosting mechanism; gain-boosted gate-bulk-driven error correction amplifier; low voltage operation; low-voltage sub-bandgap reference designs; minimised offset error; offset error reduction; reduced offset errors; sub-bandgap circuits; subthreshold MOSFET; supply sensitivity;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.0765

Filename

6548175