Title :
Total-dose radiation-hard diamond-based hydrogen sensor
Author :
Kerns, D.V., Jr. ; Kang, W.P. ; Davidson, J.L. ; Zhou, Q. ; Gurbuz, Y. ; Kerns, S.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
Sensors capable of reliable detection of hydrogen gas concentration are designed and fabricated using intrinsic diamond and doped diamond films in a MIS structure. The performance of the diamond-based gas sensor in radiation environments has been characterized by I-V measurements at room temperature. High sensitivity to hydrogen and extreme hardness to total ionizing radiation doses have been observed; the minimal change in gas-sensing characteristics at 10 MRAD is demonstrated experimentally. Analysis of the current transport mechanism, ideality factor and apparent barrier height confirm the radiation insensitivity of diamond-based MIS hydrogen sensors
Keywords :
MIS devices; diamond; elemental semiconductors; gas sensors; hydrogen; radiation hardening (electronics); 10 Mrad; C; H2; I-V measurement; MIS device; barrier height; current transport; diamond film; hydrogen gas sensor; ideality factor; ionizing radiation; total dose radiation hardening; Chemical sensors; Gas detectors; Hydrogen; Plasma devices; Plasma temperature; Sensor phenomena and characterization; Silicon; Temperature measurement; Temperature sensors; Thermal conductivity;
Journal_Title :
Nuclear Science, IEEE Transactions on
