Title :
L-C-band low-voltage BiCMOS MMICs for dual-mode cellular-LAN applications
Author :
Madihian, Mohammad ; Imai, Kiyotaka ; Yoshida, Hiroshi ; Kinoshita, Yasushi ; Yamazaki, Tohru
Author_Institution :
Network Res. Lab., NEC Corp., Kawasaki, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
This paper Is concerned with the design considerations and performance results for low-voltage Si monolithic microwave integrated circuits (MMICs) developed for mobile and personal communications applications. A 0.4 μm ECL-BiCMOS process technology was employed to develop bipolar-based RF amplifiers, MOS-based IF amplifiers, BiCMOS-based simplified Gilbert mixers, and monolithic down-converter as well as upconverter ICs incorporating these elements. These converters are designed to operate at a bias voltage of 2 V over 1.8-6.2 GHz exhibiting a conversion gain of 35-15 dB with a variable IF frequency of up to several 100 MHz. Chip size for both the downconverter and upconverter ICs is 1.0 mm×0.7 mm
Keywords :
BiCMOS integrated circuits; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; UHF amplifiers; UHF frequency convertors; UHF integrated circuits; UHF mixers; cellular radio; elemental semiconductors; intermediate-frequency amplifiers; silicon; wireless LAN; 0.4 micron; 1.8 to 6.2 GHz; 15 to 35 dB; 2 V; BiCMOS-based Gilbert mixers; C-band; ECL-BiCMOS process technology; L-band; LV BiCMOS MMICs; MOS-based IF amplifiers; Si; Si monolithic microwave ICs; bipolar-based RF amplifiers; dual-mode cellular-LAN applications; monolithic downconverter; upconverter IC; Application specific integrated circuits; BiCMOS integrated circuits; Gain; Integrated circuit technology; MMICs; Microwave integrated circuits; Mixers; Monolithic integrated circuits; Radiofrequency amplifiers; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
