Title :
0-40 GHz GaAs MESFET distributed baseband amplifier ICs for high-speed optical transmission
Author :
Kimura, Shunji ; Imai, Yuhki
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; compensation; distributed amplifiers; field effect MIMIC; gallium arsenide; integrated circuit noise; millimetre wave amplifiers; optical communication equipment; wideband amplifiers; 0 to 40 GHz; 1 dB; 36 GHz; 4 dB; 44 GHz; GaAs; MESFET distributed amplifier ICs; SDH optical transmission systems; distributed baseband amplifier; gain performance; high-frequency performance; high-speed optical transmission; loss compensation technique; noise performance; Bandwidth; Baseband; Distributed amplifiers; Frequency; Gallium arsenide; Integrated circuit noise; MESFETs; Noise figure; Optical amplifiers; Optical noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
