Title :
Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regime
Author :
Jeckelmann, Beat ; Jeanneret, Blaise
Author_Institution :
Swiss Federal Office of Metrol., Wabern, Switzerland
fDate :
4/1/1997 12:00:00 AM
Abstract :
The influence of the contacts on the value of the quantized Hall resistance has been studied in a series of high-precision measurements. Deviations of the Hall resistance of up to 0.35 μΩ/Ω from the expected value were observed in a device in which the resistance of one of the voltage contacts used in the measurement was comparable to the Hall resistance. The edge-state theory of contacts gives no satisfactory estimate for the observed deviations
Keywords :
electric resistance measurement; quantum Hall effect; units (measurement); Hall resistance; edge-state theory; four-terminal quantized Hall resistance; high-precision measurement; nonlinear regime; voltage contacts; Contact resistance; Current measurement; Electrical resistance measurement; Electrons; Gallium arsenide; Geometry; Guidelines; Metrology; Temperature distribution; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
