Investigation of the offset charge noise in single electron tunneling devices

Author

Wolf, Henning ; Ahlers, Franz Josef ; Niemeyer, J. ; Scherer, Hansjorg ; Weimann, Thomas ; Zorin, Alexander B. ; Krupenin, Vladimir A. ; Lotkhov, Sergey V. ; Presnov, Denis E.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

Volume

46

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

303

Lastpage

306

Abstract

The offset charge noise in metallic single electron tunneling (SET) devices fabricated on dielectric substrates was experimentally studied. On the basis of stereoscopic measurements of the low-frequency charge noise we show that the substrate makes an essential contribution to the total noise. We have observed that the intensity of the charge noise in SET transistors depends on the biasing dc current but is almost insensitive to temperature variations up to 300 mK. Stability investigations of an SET trap gave storage times of more than 8 h. The performance of such a device is affected by the bias current of a readout electrometer, located nearby, and by background charges

Keywords

charge measurement; electric noise measurement; electrometers; semiconductor device noise; single electron transistors; stability; substrates; tunnel transistors; 300 mK; SET transistors; SET trap; biasing dc current; dielectric substrates; low-frequency charge noise; memory cell; metallic single electron tunneling devices; noise correlation; offset charge noise; readout electrometer; single electron tunneling devices; stability; stereoscopic measurements; substrate; temperature variations; Charge measurement; Current measurement; Dielectric measurements; Dielectric substrates; Electrons; Low-frequency noise; Noise measurement; Stability; Temperature dependence; Tunneling;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.571840

Filename

571840