Title :
Integrated optimization capabilities in the VISTA technology CAD framework
Author :
Plasun, R. ; Stockinger, M. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. of Vienna, Austria
fDate :
12/1/1998 12:00:00 AM
Abstract :
Advanced analysis features implemented in the Vienna Integrated System for TCAD Applications simulation environment are presented. These functionalities support automatic experiment generation (design of experiments), model fitting (response surface methodology), optimization, and calibration. They interact with the core modules of the framework supporting the simulation of the manufacturing process and electrical characterization of semiconductor devices. Two examples demonstrate the efficiency of these framework capabilities. The first one shows the optimization of the electrical characteristics of vertical double-diffused metal-oxide-semiconductor (MOS) field-effect transistors. The second example deals with the optimization of analytical doping profiles of MOS transistors
Keywords :
MOS integrated circuits; VLSI; circuit optimisation; circuit simulation; design of experiments; doping profiles; integrated circuit design; technology CAD (electronics); VISTA technology CAD framework; Vienna Integrated System for TCAD Applications; analytical doping profiles; automatic experiment generation; calibration; core modules; design of experiments; electrical characterization; integrated optimization capabilities; manufacturing process; model fitting; response surface methodology; simulation environment; vertical double-diffused MOS transistors; Analytical models; Calibration; Design automation; Design optimization; Electric variables; FETs; Manufacturing processes; Response surface methodology; Semiconductor devices; Surface fitting;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
