Title :
Use of n+ spike doping regions as nonequilibrium connectors
Author :
Beton, P.H. ; Long, A.P. ; Couch, N.R. ; Kelly, Michael J.
Author_Institution :
GEC Res. Ltd., Wembley
fDate :
3/31/1988 12:00:00 AM
Abstract :
Very thin n+ layers of semiconductor (spike doping) may be used to control the potential difference between microelectronic components while not significantly modifying any nonequilibrium distributions of electron energy or momentum across their extent. The authors demonstrate this general principle with the example of a hot electron injection Gunn diode
Keywords :
Gunn diodes; hot carriers; integrated circuit technology; semiconductor doping; Gunn diode; hot electron injection; microelectronic components; n+ spike doping regions; nonequilibrium connectors; nonequilibrium distributions; semiconductor;
Journal_Title :
Electronics Letters
