A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links

Author

Ohhata, Kenichi ; Masuda, Toru ; Imai, Kazuo ; Takeyari, Ryoji ; Washio, Katsuyoshi

Author_Institution

Hitachi Device Eng. Co. Ltd., Tokyo, Japan

Volume

34

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

18

Lastpage

24

Abstract

A wide-dynamic-range, high-transimpedance preamplifier IC for 10-Gb/s optical fiber links was developed using a 0.3-μm Si bipolar process. The preamplifier with a limiting amplifier enables a wide dynamic range from 16 μApp to 2.5 mApp and a high transimpedance of 1 kΩ (2 kΩ in the differential output mode). Moreover, careful circuit design achieves a transimpedance fluctuation of 0.5 dBR and an average equivalent input noise current density of 12 pA/√Hz. This preamplifier IC has the highest transimpedance of any Si bipolar preamplifier for 10-Gb/s operation. Thus, the preamplifier is suitable for 10-Gb/s short-haul optical fiber links and can be used to provide a low-cost system

Keywords

bipolar analogue integrated circuits; elemental semiconductors; optical communication equipment; optical fibre communication; preamplifiers; silicon; 0.3 micron; 10 Gbit/s; Si; Si bipolar preamplifier IC; dynamic range; optical fiber link; transimpedance; Bipolar integrated circuits; Circuit synthesis; Differential amplifiers; Dynamic range; Fluctuations; Integrated circuit noise; Optical amplifiers; Optical fibers; Photonic integrated circuits; Preamplifiers;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.736652

Filename

736652