Title :
Linear and nonlinear characteristics of the silicon CMOS monolithic 50-Ω microwave and RF control element
Author :
Caverly, Robert H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
fDate :
1/1/1999 12:00:00 AM
Abstract :
Radio-frequency (RF) control elements using silicon CMOS technology are investigated as an alternative to traditional PIN diode and GaAs MESFET control devices. Silicon CMOS RF control elements are attractive because of their potential in all-silicon monolithic CMOS solutions for completely integrated baseband and RF functions in low-cost wireless systems. Results of the study show that silicon CMOS switches can be designed to rival the insertion loss and isolation of gallium arsenide switches at low frequencies. Data are presented that show less than 1 dB insertion loss and isolation of greater than 50 dB at low frequencies for a variety of silicon CMOS fabrication technologies. A model for a distortion intercept point in MOS switches is presented and validated with experimental measurements
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; electric distortion; elemental semiconductors; field effect MMIC; field effect transistor switches; losses; microwave switches; silicon; 1 dB; CMOS fabrication technologies; RF control element; SPDT control element; Si; Si CMOS switches; Si CMOS technology; distortion intercept point model; insertion loss; integrated baseband/RF functions; isolation; linear characteristics; low-cost wireless systems; monolithic microwave control element; nonlinear characteristics; Baseband; CMOS technology; Control systems; Gallium arsenide; Insertion loss; MESFETs; Radio control; Radio frequency; Silicon; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
