DocumentCode :
1456518
Title :
Development of an Alkaline-Compatible Porous-Silicon Photolithographic Process
Author :
Lai, Meifang ; Parish, Giacinta ; Liu, Yinong ; Dell, John M. ; Keating, Adrian J.
Author_Institution :
Univ. of Western Australia, Perth, WA, Australia
Volume :
20
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
418
Lastpage :
423
Abstract :
A technique for masking porous-silicon (PS) films by optical photolithography without significant film degradation is demonstrated for the first time. The chemical resistance of the PS films is achieved by low-temperature passivation via nitrogen annealing. The effect of the various photolithographic process steps is investigated by determining the changes in the optical properties of the films. The passivated PS films are shown to be resistant to strong alkaline-based solutions (dilute AZ400K developer) for up to 100 s with minimal reduction in optical thickness. Fourier transform infrared and spectral reflectance measurements show that the passivated PS films are relatively unaffected by a complete photolithography process, apart from the seepage of photoresist into the pores, which can be prevented by applying a thin protective polymer layer. Metal was deposited and patterned via the standard liftoff process on PS surface to demonstrate the feasibility of this technique.
Keywords :
annealing; elemental semiconductors; passivation; photolithography; photoresists; porous semiconductors; reduction (chemical); semiconductor thin films; silicon; Fourier transform infrared spectra; PS surface; Si; alkaline-based solutions; alkaline-compatible porous-silicon photolithographic process; chemical resistance; low-temperature passivation; masking porous-silicon films; nitrogen annealing; optical photolithography; optical thickness; passivated PS films; photoresist; spectral reflectance measurement; standard liftoff process; thin protective polymer layer; Optical device fabrication; Optical imaging; Optical refraction; Optical sensors; Optical variables control; Resists; Silicon; Alkaline developer; passivation; photolithography; porous silicon (PS);
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2011.2111356
Filename :
5719146
Link To Document :
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