DocumentCode
1456971
Title
Progress in the measurement of lattice spacing d(220) of silicon
Author
Nakayama, Kan ; Fujimoto, Hiroyuki
Author_Institution
Nat. Res. Lab. of Metrol., Ibaraki, Japan
Volume
46
Issue
2
fYear
1997
fDate
4/1/1997 12:00:00 AM
Firstpage
580
Lastpage
583
Abstract
X-ray and optical interferometry is applied to the measurement of silicon lattice spacing. The previously reported standard deviation 0.16×10-6 has been reduced to 0.05×10-6. The d(220) is 192015.593(0.01) fm after correction of lattice strain by carbon and oxygen
Keywords
X-ray crystallography; constants; electromagnetic wave interferometry; elemental semiconductors; lattice constants; light interferometry; measurement errors; silicon; 192015.593 fm; Avogadro constant; Si; X-ray crystal density method; X-ray interferometry; XRCD method; lattice spacing d(220); lattice strain correction; optical interferometry; standard deviation; Capacitive sensors; Crystals; Density measurement; Fasteners; Lattices; Measurement uncertainty; Optical interferometry; Optical pumping; Silicon; Temperature measurement;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.571922
Filename
571922
Link To Document