Title :
A Dual-Band Millimeter-Wave CMOS Oscillator With Left-Handed Resonator
Author :
Yu, A.H.-T. ; Sai-Wang Tam ; Yanghyo Kim ; Socher, E. ; Hant, W. ; Chang, Mau-Chung Frank ; Itoh, T.
Author_Institution :
Electr. Eng. Dept., Univ. of California Los Angeles, Los Angeles, CA, USA
fDate :
5/1/2010 12:00:00 AM
Abstract :
A new technique using a left-handed (LH) resonator to generate a multiband millimeter-wave carrier signal is proposed in this paper. The LH resonator exhibits nonlinear dispersion characteristic, which enables uneven spacing between resonant frequencies. With N stages of the LH unit cell, there are N/2 +1 resonant frequencies from the nonlinear dispersion curve. Moreover, the band selection switches are not located in the signal path, which can, therefore, dramatically reduce the size of switches and improve the overall quality factor of the resonator. A dual-band millimeter-wave oscillator in digital 90-nm CMOS technology is implemented to demonstrate this new technique. Using a mode selection switch, the proposed oscillator operates at 21.3 and 55.3 GHz, respectively, with a total power consumption of 14 mW.
Keywords :
CMOS digital integrated circuits; MMIC oscillators; Q-factor; resonators; digital CMOS technology; dualband millimeter-wave CMOS oscillator; frequency 21.3 GHz; frequency 55.3 GHz; left-handed resonator; multiband millimeter-wave carrier signal; power 14 mW; quality factor; size 90 nm; CMOS technology; Degradation; Dual band; Energy consumption; Millimeter wave technology; Parasitic capacitance; Q factor; Resonant frequency; Switches; Voltage-controlled oscillators; CMOS; composite right/left-handed (CRLH); dual band; left-handed (LH); millimeter wave; oscillator; resonator;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2042854
