28-V low thermal-impedance HBT with 20-W CW output power

Author

Hill, Darrell ; Kim, Tae S.

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2224

Lastpage

2228

Abstract

AlGaAs/GaAs heterojunction bipolar transistors (HBT´s) have been fabricated which exhibit record output power for GaAs flip-chip technology, and record operating voltage for GaAs microwave power devices. Transistors with 2-mm emitter length readily achieved 20-W continuous wave (CW) output power at 2 GHz when biased at 28 V, with typical power-added efficiencies of 62% (typical collector efficiencies of 70%). Maximum CW output power of 25 W was obtained, corresponding to a power density of 12.5 W/mm. All results reported were obtained with devices requiring less than 1-mm² die area. High efficiency, high power, and high power density are enabled by the low device temperatures afforded by the thermally efficient low thermal impedance (LTI) technology

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 2 GHz; 20 W; 28 V; 62 percent; AlGaAs-GaAs; CW output power; flip-chip technology; heterojunction bipolar transistor; low thermal impedance HBT; microwave power device; power density; power-added efficiency; Costs; Current density; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave transistors; Power generation; Silicon; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643820

Filename

643820