DocumentCode
1457426
Title
The turnoff transient of the bipolar-mode field-effect transistor
Author
Vitale, Gianfranco ; Busatto, Giovanni
Author_Institution
Dept. of Electron. Eng., Naples Univ., Italy
Volume
35
Issue
10
fYear
1988
fDate
10/1/1988 12:00:00 AM
Firstpage
1676
Lastpage
1682
Abstract
A model of the turnoff transient of the field-effect transistor, operated in the bipolar mode (BMFET), is developed. It is shown that the transient consists of two parts pertaining to the two-carrier and to the one-carrier operations of the device, respectively, the former being much slower than the latter. The model allows the prediction of the switching transient from the basic device parameters; thus, it allows an understanding of the underlying physics of BMFET operation and why the BMFET is faster than other bipolar devices. The mode has also been found to be in good quantitative agreement with experiments, and thus it is a useful tool for the design of the BMFET
Keywords
field effect transistors; transients; BMFET; bipolar-mode field-effect transistor; one-carrier operations; switching transient; turnoff transient; two-carrier operations; Bipolar transistors; Conductivity; Electrodes; FETs; P-n junctions; Physics; Plasma devices; Power semiconductor devices; Radiative recombination; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.7372
Filename
7372
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