Title :
Photoacoustic and OBIC measurements on planar high-voltage p+ -n junctions
Author :
Flohr, Thomas ; Helbig, Reinhard
Author_Institution :
Inst. fur Angewandte Phys., Erlangen-Nurnberg Univ., West Germany
fDate :
10/1/1988 12:00:00 AM
Abstract :
The photoacoustic technique is introduced as a tool for spatially resolved investigations on Si power devices. Photoacoustic and optical-beam-induced current (OBIC) measurements are combined to yield local information about the electric field distribution in a thin surface layer of a reverse-biased planar p+-n diode. The experimental results are described within the framework of a simple linear one-dimensional theory for the optical-beam-induced current and the photoacoustic signal
Keywords :
elemental semiconductors; photoacoustic spectra; semiconductor diodes; silicon; OBIC measurements; Si power devices; electric field distribution; linear one-dimensional theory; optical-beam-induced current; photoacoustic technique; planar high-voltage p+-n junctions; reverse-biased planar p+-n diode; spatially resolved investigations; Absorption; Charge carrier processes; Electric variables measurement; Lamps; Optical beams; Optical surface waves; Power measurement; Semiconductor diodes; Signal generators; Spatial resolution;
Journal_Title :
Electron Devices, IEEE Transactions on
