1/f frequency noise of 2-GHz high-Q thin-film sapphire resonators

Author

Ferre-Pikal, Eva S. ; Arámburo, Maria C Delgado ; Walls, Fred L. ; Lakin, Kenneth M.

Author_Institution

Wyoming Univ., Laramie, WY, USA

Volume

48

Issue

2

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

506

Lastpage

510

Abstract

We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20000 was estimated from the phase response. The results show that the FM noise of the resonators varied between S/sub y/(10 Hz)=-202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from L(10 Hz)=-39 to -47 dBc/Hz.

Keywords

1/f noise; UHF devices; crystal resonators; frequency modulation; sapphire; thin film devices; 1/f frequency modulation noise; 1/f frequency noise; 2 GHz; FM noise; PM noise; equivalent phase modulation noise; high-Q resonant modes; high-Q thin-film sapphire resonators; high-overtone thin-film sapphire resonators; oscillator; phase response; Argon; Circuit noise; Frequency modulation; Low-frequency noise; Oscillators; Phase estimation; Phase noise; Resonance; Temperature; Transistors;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.911733

Filename

911733