Title :
A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
Author :
Maher, Hassan ; Décobert, Jean ; Falcou, Aline ; Le Pallec, Michel ; Post, George ; Nissim, Yves I. ; Scavennec, André
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
1/1/1999 12:00:00 AM
Abstract :
A triple channel HEMT structure grown on InP has been developed (the “Camel” HEMT). Starting from a dual channel (InGaAs/InP) HEMT that utilizes both the high electron mobility of InGaAs and the low impact ionization coefficient of InP, a third InGaAs channel as well as a quaternary carrier supply layer have been introduced to improve the electron transfer and thus the transistor performance. The design of the new transistor structure and its fabrication technology are described. Static and dynamic performances for an 0.8 μm gate length Camel HEMT are presented and compared to standard double channel HEMT transistors that are fabricated with the same geometry and process conditions. The results show that this new structure offers a very good tradeoff between high breakdown voltage and current gain cutoff frequency
Keywords :
current density; electron mobility; high electron mobility transistors; impact ionisation; indium compounds; leakage currents; millimetre wave field effect transistors; semiconductor device breakdown; 0.8 micron; Camel HEMT; GaInAs-InP; InGaAs channel; InP; InP substrate; current gain cutoff frequency; electron transfer improvement; fabrication technology; gate leakage current; high breakdown voltage; high electron mobility; large-signal high-speed applications; low impact ionization coefficient; quaternary carrier supply layer; transistor performance; transistor structure; triple channel HEMT; Cutoff frequency; Electron mobility; Fabrication; Geometrical optics; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; Leakage current; MODFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
