Title :
Numerical calculation of electromigration under pulse current with Joule heating
Author :
Li, Zhihong ; Wu, Guoying ; Wang, Yangyuan ; Li, Zhiguo ; Sun, Yinghua
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
fDate :
1/1/1999 12:00:00 AM
Abstract :
Electromigration behavior under pulsed directional current (PDC) was investigated theoretically and experimentally. A vacancy diffusion equation under current stress was derived, and the relationship between vacancy concentration and time to failure was calculated numerically. The results show that if Joule heating is considered, the ratio of lifetime under PDC to that under DC is less than what was reported by other authors. In addition, the dependence of the lifetime on duty ratios and frequencies of PDC is not the same in different regimes of PDC frequencies. The analytical equation describing the relation between MTFPDC and MTFDC in the entire regime of frequencies, including Joule heating, is given. All calculated results are compared to experimental results
Keywords :
electromigration; failure analysis; integrated circuit interconnections; vacancies (crystal); IC metal interconnect; Joule heating; PDC frequency; current stress; duty ratio; electromigration; lifetime; mean time to failure; pulsed directional current; vacancy concentration; vacancy diffusion; Current density; Current measurement; Density measurement; Electromigration; Equations; Frequency measurement; Heating; Pulse measurements; Sun; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on