Title :
An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G
Author :
Von Kluge, Johannes W A ; Langheinrich, Werner A.
Author_Institution :
Solid State Electron. Labs., Tech. Hochschule Darmstadt, Germany
fDate :
1/1/1999 12:00:00 AM
Abstract :
An analytical model of the sensitivity of magnetic field-effect transistors (MAGFET´s) is presented. The model includes secondary and parasitic geometric effects as well as operating point dependencies. In order to get a continuous mathematical description for the sensitivity, we introduce a continuous function for the geometric correction factor G. This description of G is not limited to MAGFET´s and can be used for any magnetic device
Keywords :
MOSFET; field effect transistors; magnetic sensors; semiconductor device models; sensitivity analysis; MAGFET sensitivity; analytical model; continuous description; geometric correction factor; magnetic field-effect transistors; operating point dependencies; parasitic geometric effects; secondary effects; Analytical models; Charge carriers; Current density; Difference equations; FETs; Lorentz covariance; Magnetic devices; Magnetic field measurement; Magnetic fields; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
