Infrared focal plane array technology

Author

Scribner, Dean A. ; Kruer, Melvin R. ; Killiany, Joseph M.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

79

Issue

1

fYear

1991

fDate

1/1/1991 12:00:00 AM

Firstpage

66

Lastpage

85

Abstract

Requirements for infrared focal plane arrays (IRFPAs) for advanced infrared imaging systems are discussed, and an overview is given of different IRFPA architectures. Important IR detector structures, including photoconductive, photovoltaic, metal-insulator-semiconductor (MIS), and Schottky barrier, are reviewed. Infrared detector materials and related crystal-growth techniques are discussed, emphasizing applicability to IRFPA designs and performance. Three types of input circuit used to couple the detector to the readout circuitry are discussed, namely, direct injection, buffered direct injection, and gate modulation. An overview is given of several readout techniques, including the CCD, MOSFET switch, CID, and CIM. Also discussed are related onchip signal processing topics as well as questions regarding producibility and array implementation

Keywords

CCD image sensors; Schottky effect; crystal growth; image sensors; infrared detectors; infrared imaging; metal-insulator-semiconductor devices; photoconducting devices; photodetectors; reviews; semiconductor devices; CCD; CID; CIM; IR detector structures; MIS detector; MOSFET switch; Schottky barrier; buffered direct injection; crystal-growth techniques; detector materials; gate modulation; infrared focal plane arrays; infrared imaging systems; input circuit; metal-insulator-semiconductor; onchip signal processing; readout circuitry; Circuits; Crystalline materials; Infrared detectors; Infrared imaging; Metal-insulator structures; Photoconducting materials; Photovoltaic systems; Schottky barriers; Solar power generation; Switches;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.64383

Filename

64383