Observation of “capacitance overshoot” in the transient current measurement of polysilicon TFT´s

Author

Tam, Simon W-B ; Migliorato, P. ; Lui, O.K.B. ; Quinn, M.J.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

134

Lastpage

138

Abstract

We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT´s: the presence of an “overshoot” in the transient response, which implies a time dependent gate capacitance exceeding C_ox WL. We have also performed two-dimensional (2-D) transient simulations to explain the experimental results. Our analysis indicates that a TFT circuit model based on lumped intranodal impedances cannot explain the observed transient current behavior. It follows that the “subtransistor” approach is essential for accurate dynamic circuit simulations

Keywords

MOS integrated circuits; capacitance; circuit simulation; electric current measurement; elemental semiconductors; silicon; thin film transistors; transient analysis; transient response; 2D transient simulations; Si; capacitance overshoot; dynamic circuit simulations; lumped intranodal impedances; polysilicon TFTs; subtransistor approach; time dependent gate capacitance; transient current measurement; transient response; Analytical models; Capacitance; Circuit simulation; Current measurement; Performance analysis; Performance evaluation; Thin film transistors; Transient analysis; Transient response; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737451

Filename

737451