DocumentCode :
1457956
Title :
Negative Terminal Capacitance of Light Emitting Diodes at Alternating Current (AC) Biases
Author :
Feng, L.F. ; Li, Y. ; Zhu, C.Y. ; Cong, H.X. ; Wang, C.D.
Author_Institution :
Dept. of Appl. Phys., Tianjin Univ., Tianjin, China
Volume :
46
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
1072
Lastpage :
1075
Abstract :
Measurement of obvious negative capacitance (NC) at large forward bias of light-emitting diodes (LEDs), using an alternating current (AC) small signal, together with direct current (DC) I-V plot, has shown that the NC grows exponentially with the forward applied voltage. The experimental results are unexpected and are in conflict with Shockley´s p-n junction theory which only includes increasing diffusion capacitance and certainly no negative capacitance. The experiment also shows that the ideal factor of LEDs is about 4, which far exceeds the traditional theory value. However, these results support the comprehensive p-n junction theory presented by Hess. Using the framework of his theory, the NC could be interpreted distinctly.
Keywords :
capacitance; light emitting diodes; p-n junctions; Shockley p-n junction theory; alternating current; alternating current bias; comprehensive p-n junction theory; diffusion capacitance; direct current I-V plot; forward applied voltage; ideal factor; light emitting diodes; negative terminal capacitance; Capacitance measurement; Current density; Current measurement; Density measurement; Equivalent circuits; Light emitting diodes; P-n junctions; Physics; Semiconductor diodes; Voltage; Capacitance measurement; current density; light-emitting diodes; p-n junction;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2010.2043337
Filename :
5440020
Link To Document :
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