Title :
Constant-resistance deep-level transient spectroscopy in Si and Ge JFET´s
Author :
Kolev, Plamen V. ; Deen, M. Jamal ; Kierstead, James ; Citterio, Mauro
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
1/1/1999 12:00:00 AM
Abstract :
The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET´s). We have studied three groups of devices: commercially available discrete silicon JFET´s; virgin and exposed to high-level neutron radiation silicon JFET´s, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET´s. CR-DLTS is similar to both the conductance DLTS and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors
Keywords :
deep level transient spectroscopy; elemental semiconductors; germanium; junction gate field effect transistors; neutron effects; silicon; CR-DLTS; Ge; JFET; Si; constant resistance deep level transient spectroscopy; defect profiling; junction field effect transistor; neutron radiation damage; space charge region; trap concentration; Charge measurement; Current measurement; FETs; Germanium; Neutrons; Silicon; Size measurement; Space charge; Spectroscopy; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on