Title :
2.5 kV-1000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT)
Author :
Takahashi, Yoshikazu ; Yoshikawa, Koh ; Soutome, Masayuki ; Fujii, Takeshi ; Kirihata, Humiaki ; Seki, Yasukazu
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Nagano, Japan
fDate :
1/1/1999 12:00:00 AM
Abstract :
A 2.5 kV-1000 A power pack IGBT (flat-packaged reverse conducting IGBT) has been developed using NPT (non-punchthrough) IGBT chip technology, the gate-source repair technology, the parallel connection technology with no oscillation and the multi-chip assembly technology. The power pack IGBT is specially designed for high power and highly reliable industrial and traction applications. Compared with conventional IGBT modules, this power pack IGBT has high reliability by use of a hermetic package and a press contact structure. In addition to the high reliability, this power pack IGBT is simple and compact for a 2.5 kV-1 kA class device because the assembled IGBT and FWD chips are able to shrink due to the low thermal impedance of both side cooling. The power pack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 4.2 V at the collector current (IC ) of 1000 A, the junction temperature (Ti) of 125°C, and the turnoff capability of over 3×IC
Keywords :
insulated gate bipolar transistors; semiconductor device packaging; 1000 A; 2.5 kV; FWD chip; cooling; gate-source repair technology; hermetic package; high power flat packaged NPT RC-IGBT; industrial application; multi-chip assembly technology; nonpunchthrough reverse conducting IGBT; parallel connection technology; power pack IGBT; press contact; reliability; thermal impedance; traction application; Assembly; Cooling; Electrodes; Impedance; Insulated gate bipolar transistors; Laboratories; Plastic packaging; Research and development; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
