Quaternary Enhancement-Mode HFET With In Situ SiN Passivation

Author

Ketteniss, N. ; Behmenburg, H. ; Hahn, H. ; Noculak, A. ; Holländer, B. ; Kalisch, H. ; Heuken, M. ; Vescan, A.

Author_Institution

GaN Device Technol., RWTH Aachen Univ., Aachen, Germany

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

519

Lastpage

521

Abstract

A lattice-matched InAlGaN/GaN heterostructure with a barrier-layer thickness of 4 nm has been grown and passivated in situ with a 63-nm SiN by metal-organic chemical vapor deposition. Enhancement-mode heterostructure field-effect transistors have been realized by a fluorine-based surface treatment after the local removal of the SiN. The threshold voltage and transconductance were 0.65 V and 250 mS/mm, respectively, for a 1-μm gate-length device. The benefits of an in situ SiN passivation are demonstrated: first, the stabilization of the barrier material and prevention from oxidation and second, the improvement of the device characteristics by reduced source resistance and reduced trapping effects.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; fluorine; gallium compounds; high electron mobility transistors; indium compounds; oxidation; passivation; semiconductor growth; silicon compounds; InAlGaN-GaN; SiN; barrier material; barrier prevention; barrier-layer thickness; device characteristics; enhancement-mode heterostructure field-effect transistors; fluorine-based surface treatment; gate-length device; in situ silicon nitride passivation; lattice-matched heterostructure; metal-organic chemical vapor deposition; oxidation; quaternary enhancement-mode HFET; size 63 nm; source resistance; stabilization; threshold voltage; transconductance; trapping effects; voltage 0.65 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Silicon compounds; In situ silicon nitride passivation; normally off operation; quaternary nitride HFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2184735

Filename

6158571