Title :
Measurement-Based Ring Oscillator Variation Analysis
Author :
Johguchi, Koh ; Kaya, Akihiro ; Mattausch, Hans Jürgen ; Koide, Tetsushi ; Izumi, Shinya ; Sadachika, Norio
Author_Institution :
Hiroshima Univ., Hiroshima, Japan
Abstract :
As transistor size scales down, unavoidable process variations are rapidly increasing. Consequently, it´s essential for designers to accurately estimate within-die and interdie variations so that circuits and integrated systems can operate correctly. This article describes an analysis of ring oscillators that were designed in 180-nm and 100-nm CMOS technologies, and discusses the oscillators´ frequency variations as determined for different stage numbers and supply voltages.
Keywords :
CMOS integrated circuits; integrated circuit measurement; oscillators; CMOS technology; interdie variations; ring oscillator variation analysis; size 100 nm; size 180 nm; transistor size; within-die variations; CMOS technology; Design methodology; Frequency; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Ring oscillators; Very large scale integration; Voltage; Voltage-controlled oscillators; CMOS; compact model; design and test; low power; ring oscillators; surface potential; within-die variation; within-wafer variation;
Journal_Title :
Design & Test of Computers, IEEE
DOI :
10.1109/MDT.2010.57
