Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates

Author

Yang, C.C. ; Sheu, J.K. ; Kuo, C.H. ; Huang, M.S. ; Tu, S.J. ; Huang, F.W. ; Lee, M.L. ; Yeh, Yu-Hsiang ; Liang, X.W. ; Lai, W.C.

Author_Institution

Adv. Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

536

Lastpage

538

Abstract

The InGaN/sapphire-based photovoltaic (PV) cells with Al_0.14Ga_0.86N/In_0.21Ga_0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm², 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

Keywords

III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; sapphire; wide band gap semiconductors; InGaN-Al₂O₃; open circuit voltage; patterned sapphire substrate; photovoltaic cells; photovoltaic device; power conversion efficiency; short circuit current density; Absorption; Current measurement; Epitaxial growth; Gallium nitride; Photonic band gap; Photovoltaic systems; Substrates; InGaN; patterned sapphire substrate (PSS); photovoltaic (PV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2107725

Filename

5719623